OwlCyberSecurity - MANAGER

Edit File: nand.h

/* SPDX-License-Identifier: GPL-2.0 */ /* * Copyright 2017 - Free Electrons * * Authors: * Boris Brezillon <boris.brezillon@free-electrons.com> * Peter Pan <peterpandong@micron.com> */ #ifndef __LINUX_MTD_NAND_H #define __LINUX_MTD_NAND_H #include <linux/mtd/mtd.h> /** * struct nand_memory_organization - Memory organization structure * @bits_per_cell: number of bits per NAND cell * @pagesize: page size * @oobsize: OOB area size * @pages_per_eraseblock: number of pages per eraseblock * @eraseblocks_per_lun: number of eraseblocks per LUN (Logical Unit Number) * @max_bad_eraseblocks_per_lun: maximum number of eraseblocks per LUN * @planes_per_lun: number of planes per LUN * @luns_per_target: number of LUN per target (target is a synonym for die) * @ntargets: total number of targets exposed by the NAND device */ struct nand_memory_organization { unsigned int bits_per_cell; unsigned int pagesize; unsigned int oobsize; unsigned int pages_per_eraseblock; unsigned int eraseblocks_per_lun; unsigned int max_bad_eraseblocks_per_lun; unsigned int planes_per_lun; unsigned int luns_per_target; unsigned int ntargets; }; #define NAND_MEMORG(bpc, ps, os, ppe, epl, mbb, ppl, lpt, nt) \ { \ .bits_per_cell = (bpc), \ .pagesize = (ps), \ .oobsize = (os), \ .pages_per_eraseblock = (ppe), \ .eraseblocks_per_lun = (epl), \ .max_bad_eraseblocks_per_lun = (mbb), \ .planes_per_lun = (ppl), \ .luns_per_target = (lpt), \ .ntargets = (nt), \ } /** * struct nand_row_converter - Information needed to convert an absolute offset * into a row address * @lun_addr_shift: position of the LUN identifier in the row address * @eraseblock_addr_shift: position of the eraseblock identifier in the row * address */ struct nand_row_converter { unsigned int lun_addr_shift; unsigned int eraseblock_addr_shift; }; /** * struct nand_pos - NAND position object * @target: the NAND target/die * @lun: the LUN identifier * @plane: the plane within the LUN * @eraseblock: the eraseblock within the LUN * @page: the page within the LUN * * These information are usually used by specific sub-layers to select the * appropriate target/die and generate a row address to pass to the device. */ struct nand_pos { unsigned int target; unsigned int lun; unsigned int plane; unsigned int eraseblock; unsigned int page; }; /** * struct nand_page_io_req - NAND I/O request object * @pos: the position this I/O request is targeting * @dataoffs: the offset within the page * @datalen: number of data bytes to read from/write to this page * @databuf: buffer to store data in or get data from * @ooboffs: the OOB offset within the page * @ooblen: the number of OOB bytes to read from/write to this page * @oobbuf: buffer to store OOB data in or get OOB data from * @mode: one of the %MTD_OPS_XXX mode * * This object is used to pass per-page I/O requests to NAND sub-layers. This * way all useful information are already formatted in a useful way and * specific NAND layers can focus on translating these information into * specific commands/operations. */ struct nand_page_io_req { struct nand_pos pos; unsigned int dataoffs; unsigned int datalen; union { const void *out; void *in; } databuf; unsigned int ooboffs; unsigned int ooblen; union { const void *out; void *in; } oobbuf; int mode; }; /** * struct nand_ecc_req - NAND ECC requirements * @strength: ECC strength * @step_size: ECC step/block size */ struct nand_ecc_req { unsigned int strength; unsigned int step_size; }; #define NAND_ECCREQ(str, stp) { .strength = (str), .step_size = (stp) } /** * struct nand_bbt - bad block table object * @cache: in memory BBT cache */ struct nand_bbt { unsigned long *cache; }; struct nand_device; /** * struct nand_ops - NAND operations * @erase: erase a specific block. No need to check if the block is bad before * erasing, this has been taken care of by the generic NAND layer * @markbad: mark a specific block bad. No need to check if the block is * already marked bad, this has been taken care of by the generic * NAND layer. This method should just write the BBM (Bad Block * Marker) so that future call to struct_nand_ops->isbad() return * true * @isbad: check whether a block is bad or not. This method should just read * the BBM and return whether the block is bad or not based on what it * reads * * These are all low level operations that should be implemented by specialized * NAND layers (SPI NAND, raw NAND, ...). */ struct nand_ops { int (*erase)(struct nand_device *nand, const struct nand_pos *pos); int (*markbad)(struct nand_device *nand, const struct nand_pos *pos); bool (*isbad)(struct nand_device *nand, const struct nand_pos *pos); }; /** * struct nand_device - NAND device * @mtd: MTD instance attached to the NAND device * @memorg: memory layout * @eccreq: ECC requirements * @rowconv: position to row address converter * @bbt: bad block table info * @ops: NAND operations attached to the NAND device * * Generic NAND object. Specialized NAND layers (raw NAND, SPI NAND, OneNAND) * should declare their own NAND object embedding a nand_device struct (that's * how inheritance is done). * struct_nand_device->memorg and struct_nand_device->eccreq should be filled * at device detection time to reflect the NAND device * capabilities/requirements. Once this is done nanddev_init() can be called. * It will take care of converting NAND information into MTD ones, which means * the specialized NAND layers should never manually tweak * struct_nand_device->mtd except for the ->_read/write() hooks. */ struct nand_device { struct mtd_info mtd; struct nand_memory_organization memorg; struct nand_ecc_req eccreq; struct nand_row_converter rowconv; struct nand_bbt bbt; const struct nand_ops *ops; }; /** * struct nand_io_iter - NAND I/O iterator * @req: current I/O request * @oobbytes_per_page: maximum number of OOB bytes per page * @dataleft: remaining number of data bytes to read/write * @oobleft: remaining number of OOB bytes to read/write * * Can be used by specialized NAND layers to iterate over all pages covered * by an MTD I/O request, which should greatly simplifies the boiler-plate * code needed to read/write data from/to a NAND device. */ struct nand_io_iter { struct nand_page_io_req req; unsigned int oobbytes_per_page; unsigned int dataleft; unsigned int oobleft; }; /** * mtd_to_nanddev() - Get the NAND device attached to the MTD instance * @mtd: MTD instance * * Return: the NAND device embedding @mtd. */ static inline struct nand_device *mtd_to_nanddev(struct mtd_info *mtd) { return container_of(mtd, struct nand_device, mtd); } /** * nanddev_to_mtd() - Get the MTD device attached to a NAND device * @nand: NAND device * * Return: the MTD device embedded in @nand. */ static inline struct mtd_info *nanddev_to_mtd(struct nand_device *nand) { return &nand->mtd; } /* * nanddev_bits_per_cell() - Get the number of bits per cell * @nand: NAND device * * Return: the number of bits per cell. */ static inline unsigned int nanddev_bits_per_cell(const struct nand_device *nand) { return nand->memorg.bits_per_cell; } /** * nanddev_page_size() - Get NAND page size * @nand: NAND device * * Return: the page size. */ static inline size_t nanddev_page_size(const struct nand_device *nand) { return nand->memorg.pagesize; } /** * nanddev_per_page_oobsize() - Get NAND OOB size * @nand: NAND device * * Return: the OOB size. */ static inline unsigned int nanddev_per_page_oobsize(const struct nand_device *nand) { return nand->memorg.oobsize; } /** * nanddev_pages_per_eraseblock() - Get the number of pages per eraseblock * @nand: NAND device * * Return: the number of pages per eraseblock. */ static inline unsigned int nanddev_pages_per_eraseblock(const struct nand_device *nand) { return nand->memorg.pages_per_eraseblock; } /** * nanddev_pages_per_target() - Get the number of pages per target * @nand: NAND device * * Return: the number of pages per target. */ static inline unsigned int nanddev_pages_per_target(const struct nand_device *nand) { return nand->memorg.pages_per_eraseblock * nand->memorg.eraseblocks_per_lun * nand->memorg.luns_per_target; } /** * nanddev_per_page_oobsize() - Get NAND erase block size * @nand: NAND device * * Return: the eraseblock size. */ static inline size_t nanddev_eraseblock_size(const struct nand_device *nand) { return nand->memorg.pagesize * nand->memorg.pages_per_eraseblock; } /** * nanddev_eraseblocks_per_lun() - Get the number of eraseblocks per LUN * @nand: NAND device * * Return: the number of eraseblocks per LUN. */ static inline unsigned int nanddev_eraseblocks_per_lun(const struct nand_device *nand) { return nand->memorg.eraseblocks_per_lun; } /** * nanddev_eraseblocks_per_target() - Get the number of eraseblocks per target * @nand: NAND device * * Return: the number of eraseblocks per target. */ static inline unsigned int nanddev_eraseblocks_per_target(const struct nand_device *nand) { return nand->memorg.eraseblocks_per_lun * nand->memorg.luns_per_target; } /** * nanddev_target_size() - Get the total size provided by a single target/die * @nand: NAND device * * Return: the total size exposed by a single target/die in bytes. */ static inline u64 nanddev_target_size(const struct nand_device *nand) { return (u64)nand->memorg.luns_per_target * nand->memorg.eraseblocks_per_lun * nand->memorg.pages_per_eraseblock * nand->memorg.pagesize; } /** * nanddev_ntarget() - Get the total of targets * @nand: NAND device * * Return: the number of targets/dies exposed by @nand. */ static inline unsigned int nanddev_ntargets(const struct nand_device *nand) { return nand->memorg.ntargets; } /** * nanddev_neraseblocks() - Get the total number of eraseblocks * @nand: NAND device * * Return: the total number of eraseblocks exposed by @nand. */ static inline unsigned int nanddev_neraseblocks(const struct nand_device *nand) { return nand->memorg.ntargets * nand->memorg.luns_per_target * nand->memorg.eraseblocks_per_lun; } /** * nanddev_size() - Get NAND size * @nand: NAND device * * Return: the total size (in bytes) exposed by @nand. */ static inline u64 nanddev_size(const struct nand_device *nand) { return nanddev_target_size(nand) * nanddev_ntargets(nand); } /** * nanddev_get_memorg() - Extract memory organization info from a NAND device * @nand: NAND device * * This can be used by the upper layer to fill the memorg info before calling * nanddev_init(). * * Return: the memorg object embedded in the NAND device. */ static inline struct nand_memory_organization * nanddev_get_memorg(struct nand_device *nand) { return &nand->memorg; } int nanddev_init(struct nand_device *nand, const struct nand_ops *ops, struct module *owner); void nanddev_cleanup(struct nand_device *nand); /** * nanddev_register() - Register a NAND device * @nand: NAND device * * Register a NAND device. * This function is just a wrapper around mtd_device_register() * registering the MTD device embedded in @nand. * * Return: 0 in case of success, a negative error code otherwise. */ static inline int nanddev_register(struct nand_device *nand) { return mtd_device_register(&nand->mtd, NULL, 0); } /** * nanddev_unregister() - Unregister a NAND device * @nand: NAND device * * Unregister a NAND device. * This function is just a wrapper around mtd_device_unregister() * unregistering the MTD device embedded in @nand. * * Return: 0 in case of success, a negative error code otherwise. */ static inline int nanddev_unregister(struct nand_device *nand) { return mtd_device_unregister(&nand->mtd); } /** * nanddev_set_of_node() - Attach a DT node to a NAND device * @nand: NAND device * @np: DT node * * Attach a DT node to a NAND device. */ static inline void nanddev_set_of_node(struct nand_device *nand, struct device_node *np) { mtd_set_of_node(&nand->mtd, np); } /** * nanddev_get_of_node() - Retrieve the DT node attached to a NAND device * @nand: NAND device * * Return: the DT node attached to @nand. */ static inline struct device_node *nanddev_get_of_node(struct nand_device *nand) { return mtd_get_of_node(&nand->mtd); } /** * nanddev_offs_to_pos() - Convert an absolute NAND offset into a NAND position * @nand: NAND device * @offs: absolute NAND offset (usually passed by the MTD layer) * @pos: a NAND position object to fill in * * Converts @offs into a nand_pos representation. * * Return: the offset within the NAND page pointed by @pos. */ static inline unsigned int nanddev_offs_to_pos(struct nand_device *nand, loff_t offs, struct nand_pos *pos) { unsigned int pageoffs; u64 tmp = offs; pageoffs = do_div(tmp, nand->memorg.pagesize); pos->page = do_div(tmp, nand->memorg.pages_per_eraseblock); pos->eraseblock = do_div(tmp, nand->memorg.eraseblocks_per_lun); pos->plane = pos->eraseblock % nand->memorg.planes_per_lun; pos->lun = do_div(tmp, nand->memorg.luns_per_target); pos->target = tmp; return pageoffs; } /** * nanddev_pos_cmp() - Compare two NAND positions * @a: First NAND position * @b: Second NAND position * * Compares two NAND positions. * * Return: -1 if @a < @b, 0 if @a == @b and 1 if @a > @b. */ static inline int nanddev_pos_cmp(const struct nand_pos *a, const struct nand_pos *b) { if (a->target != b->target) return a->target < b->target ? -1 : 1; if (a->lun != b->lun) return a->lun < b->lun ? -1 : 1; if (a->eraseblock != b->eraseblock) return a->eraseblock < b->eraseblock ? -1 : 1; if (a->page != b->page) return a->page < b->page ? -1 : 1; return 0; } /** * nanddev_pos_to_offs() - Convert a NAND position into an absolute offset * @nand: NAND device * @pos: the NAND position to convert * * Converts @pos NAND position into an absolute offset. * * Return: the absolute offset. Note that @pos points to the beginning of a * page, if one wants to point to a specific offset within this page * the returned offset has to be adjusted manually. */ static inline loff_t nanddev_pos_to_offs(struct nand_device *nand, const struct nand_pos *pos) { unsigned int npages; npages = pos->page + ((pos->eraseblock + (pos->lun + (pos->target * nand->memorg.luns_per_target)) * nand->memorg.eraseblocks_per_lun) * nand->memorg.pages_per_eraseblock); return (loff_t)npages * nand->memorg.pagesize; } /** * nanddev_pos_to_row() - Extract a row address from a NAND position * @nand: NAND device * @pos: the position to convert * * Converts a NAND position into a row address that can then be passed to the * device. * * Return: the row address extracted from @pos. */ static inline unsigned int nanddev_pos_to_row(struct nand_device *nand, const struct nand_pos *pos) { return (pos->lun << nand->rowconv.lun_addr_shift) | (pos->eraseblock << nand->rowconv.eraseblock_addr_shift) | pos->page; } /** * nanddev_pos_next_target() - Move a position to the next target/die * @nand: NAND device * @pos: the position to update * * Updates @pos to point to the start of the next target/die. Useful when you * want to iterate over all targets/dies of a NAND device. */ static inline void nanddev_pos_next_target(struct nand_device *nand, struct nand_pos *pos) { pos->page = 0; pos->plane = 0; pos->eraseblock = 0; pos->lun = 0; pos->target++; } /** * nanddev_pos_next_lun() - Move a position to the next LUN * @nand: NAND device * @pos: the position to update * * Updates @pos to point to the start of the next LUN. Useful when you want to * iterate over all LUNs of a NAND device. */ static inline void nanddev_pos_next_lun(struct nand_device *nand, struct nand_pos *pos) { if (pos->lun >= nand->memorg.luns_per_target - 1) return nanddev_pos_next_target(nand, pos); pos->lun++; pos->page = 0; pos->plane = 0; pos->eraseblock = 0; } /** * nanddev_pos_next_eraseblock() - Move a position to the next eraseblock * @nand: NAND device * @pos: the position to update * * Updates @pos to point to the start of the next eraseblock. Useful when you * want to iterate over all eraseblocks of a NAND device. */ static inline void nanddev_pos_next_eraseblock(struct nand_device *nand, struct nand_pos *pos) { if (pos->eraseblock >= nand->memorg.eraseblocks_per_lun - 1) return nanddev_pos_next_lun(nand, pos); pos->eraseblock++; pos->page = 0; pos->plane = pos->eraseblock % nand->memorg.planes_per_lun; } /** * nanddev_pos_next_page() - Move a position to the next page * @nand: NAND device * @pos: the position to update * * Updates @pos to point to the start of the next page. Useful when you want to * iterate over all pages of a NAND device. */ static inline void nanddev_pos_next_page(struct nand_device *nand, struct nand_pos *pos) { if (pos->page >= nand->memorg.pages_per_eraseblock - 1) return nanddev_pos_next_eraseblock(nand, pos); pos->page++; } /** * nand_io_iter_init - Initialize a NAND I/O iterator * @nand: NAND device * @offs: absolute offset * @req: MTD request * @iter: NAND I/O iterator * * Initializes a NAND iterator based on the information passed by the MTD * layer. */ static inline void nanddev_io_iter_init(struct nand_device *nand, loff_t offs, struct mtd_oob_ops *req, struct nand_io_iter *iter) { struct mtd_info *mtd = nanddev_to_mtd(nand); iter->req.mode = req->mode; iter->req.dataoffs = nanddev_offs_to_pos(nand, offs, &iter->req.pos); iter->req.ooboffs = req->ooboffs; iter->oobbytes_per_page = mtd_oobavail(mtd, req); iter->dataleft = req->len; iter->oobleft = req->ooblen; iter->req.databuf.in = req->datbuf; iter->req.datalen = min_t(unsigned int, nand->memorg.pagesize - iter->req.dataoffs, iter->dataleft); iter->req.oobbuf.in = req->oobbuf; iter->req.ooblen = min_t(unsigned int, iter->oobbytes_per_page - iter->req.ooboffs, iter->oobleft); } /** * nand_io_iter_next_page - Move to the next page * @nand: NAND device * @iter: NAND I/O iterator * * Updates the @iter to point to the next page. */ static inline void nanddev_io_iter_next_page(struct nand_device *nand, struct nand_io_iter *iter) { nanddev_pos_next_page(nand, &iter->req.pos); iter->dataleft -= iter->req.datalen; iter->req.databuf.in += iter->req.datalen; iter->oobleft -= iter->req.ooblen; iter->req.oobbuf.in += iter->req.ooblen; iter->req.dataoffs = 0; iter->req.ooboffs = 0; iter->req.datalen = min_t(unsigned int, nand->memorg.pagesize, iter->dataleft); iter->req.ooblen = min_t(unsigned int, iter->oobbytes_per_page, iter->oobleft); } /** * nand_io_iter_end - Should end iteration or not * @nand: NAND device * @iter: NAND I/O iterator * * Check whether @iter has reached the end of the NAND portion it was asked to * iterate on or not. * * Return: true if @iter has reached the end of the iteration request, false * otherwise. */ static inline bool nanddev_io_iter_end(struct nand_device *nand, const struct nand_io_iter *iter) { if (iter->dataleft || iter->oobleft) return false; return true; } /** * nand_io_for_each_page - Iterate over all NAND pages contained in an MTD I/O * request * @nand: NAND device * @start: start address to read/write from * @req: MTD I/O request * @iter: NAND I/O iterator * * Should be used for iterate over pages that are contained in an MTD request. */ #define nanddev_io_for_each_page(nand, start, req, iter) \ for (nanddev_io_iter_init(nand, start, req, iter); \ !nanddev_io_iter_end(nand, iter); \ nanddev_io_iter_next_page(nand, iter)) bool nanddev_isbad(struct nand_device *nand, const struct nand_pos *pos); bool nanddev_isreserved(struct nand_device *nand, const struct nand_pos *pos); int nanddev_erase(struct nand_device *nand, const struct nand_pos *pos); int nanddev_markbad(struct nand_device *nand, const struct nand_pos *pos); /* BBT related functions */ enum nand_bbt_block_status { NAND_BBT_BLOCK_STATUS_UNKNOWN, NAND_BBT_BLOCK_GOOD, NAND_BBT_BLOCK_WORN, NAND_BBT_BLOCK_RESERVED, NAND_BBT_BLOCK_FACTORY_BAD, NAND_BBT_BLOCK_NUM_STATUS, }; int nanddev_bbt_init(struct nand_device *nand); void nanddev_bbt_cleanup(struct nand_device *nand); int nanddev_bbt_update(struct nand_device *nand); int nanddev_bbt_get_block_status(const struct nand_device *nand, unsigned int entry); int nanddev_bbt_set_block_status(struct nand_device *nand, unsigned int entry, enum nand_bbt_block_status status); int nanddev_bbt_markbad(struct nand_device *nand, unsigned int block); /** * nanddev_bbt_pos_to_entry() - Convert a NAND position into a BBT entry * @nand: NAND device * @pos: the NAND position we want to get BBT entry for * * Return the BBT entry used to store information about the eraseblock pointed * by @pos. * * Return: the BBT entry storing information about eraseblock pointed by @pos. */ static inline unsigned int nanddev_bbt_pos_to_entry(struct nand_device *nand, const struct nand_pos *pos) { return pos->eraseblock + ((pos->lun + (pos->target * nand->memorg.luns_per_target)) * nand->memorg.eraseblocks_per_lun); } /** * nanddev_bbt_is_initialized() - Check if the BBT has been initialized * @nand: NAND device * * Return: true if the BBT has been initialized, false otherwise. */ static inline bool nanddev_bbt_is_initialized(struct nand_device *nand) { return !!nand->bbt.cache; } /* MTD -> NAND helper functions. */ int nanddev_mtd_erase(struct mtd_info *mtd, struct erase_info *einfo); int nanddev_mtd_max_bad_blocks(struct mtd_info *mtd, loff_t offs, size_t len); #endif /* __LINUX_MTD_NAND_H */